![]() Second order temperature coefficient, IS. Second order temperature coefficient, IRBįirst order temperature coefficient, IS. ![]() Second order temperature coefficient, IKR Second order temperature coefficient, IKF Valid values are 0, 1, 2 or 3.Ĭapacitance temperature selector. If none of these parameters are specified, the standard (SPICE) temperature model is enabled and the following parameters have no effect. TLEV, TLEVC, TIKF1, TIKF2, TIKR1, TIKR2, TIRB1, TIRB2. This is the case if one or more of the following parameters are defined in the. The parameters defined in the following table are temperature coefficients and apply if the Hspice temperature model is enabled. Second order temperature coefficient, RBM Quasi saturation temp coeff for hole mobility Quasi saturation temp coeff for scattering limited hole carrier velocity Quasi saturation extrapolated bandgap voltage at 0K Set to non-zero to enable quasi saturation model QUASIMOD=1: temperature dependence enabledĮpitaxial region resistance. See to 0 for compatibility with earlier versions and other simulators 1 (default) selects a corrected model for base shot and flicker noise. Offsets global temperature defined using. If specified, defines the absolute model temperature overriding the global temperature defined using. Reference temperature the temperature at which the model parameters were measured Zero-bias collector substrate capacitanceįorward and reverse beta temperature exponentĬoefficient for forward-bias depletion capacitance formula ![]() The symbols '$\times$' and '$\div$' in the Area column means that the specified parameter should be multiplied or divided by the area factor respectively.Ĭorner for forward beta high current roll-offĬorner for reverse beta high current roll-offĬurrent at which base resistance falls halfway to its minimum valueĮxcess phase at freq=1.0/(TF$\times 2\pi$) Hzįraction of B-C depletion capacitance connected to internal base node If both TEMP and DTEMP are specified, TEMP takes precedence. Similar to local_temp but is specified relative to circuit temperature. Equivalent to putting mult devices in parallel.ĭifferential temperature. These only have an effect if the UIC parameter is specified on the. Initial conditions for base-emitter and collector-emitter junctions respectively. This is used in latching circuits such as thyristors and bistables to induce a particular state. Instructs simulator to calculate operating point analysis with device initially off. an area of 3 would make the device behave like 3 transistors in parallel. Must begin with a letter but can contain any character except whitespace and '.'.Īrea multiplying factor.
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